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在金属氧化物半导体场效应晶体管(MOSFET)作为开关配合电容充放电实现脉冲功率放大时，输出的脉冲电流受到MOSFET元件性能制约，而且由......
A 15 Gbps-NRZ,30 Gbps-PAM4,120 mA laser diode driver implemented in 0.15-an GaAs E-mode pHEMT techno
This paper presents the design and testing of a 15 Gbps non-return-to-zero (NRZ),30 Gbps 4-level pulse amplitude modulat......
